KUALA LUMPUR, Aug 29 (Bernama) -- Toshiba Electronic Devices & Storage Corporation (Toshiba) has developed “MG250YD2YMS3”, the industry’s first 2200 volt (V) dual silicon carbide (SiC) MOSFET module for industrial equipment.
The new module has a drain current (DC) rating of 250A and uses the company’s third generation SiC MOSFET chips.
According to Toshiba in a statement, it is suitable for applications that use DC1500V, such as photovoltaic power systems and energy storage systems.
Industrial applications like those mentioned above generally use DC1000V or lower power, and their power devices are mostly 1200V or 1700V products.
However, anticipating widespread use of DC1500V in coming years, Toshiba has released the industry’s first 2200V product.
Toshiba will continue to meet the market needs for high efficiency and the downsizing of industrial equipment.
-- BERNAMA
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