TOKYO, July 25 (Bernama) -- Kioxia Corporation, the inventor of NAND flash memory, is the recipient of the FMS: the Future of Memory and Storage Lifetime Achievement Award for 2024. The Kioxia engineering team, consisting of Hideaki Aochi, Ryota Katsumata, Masaru Kito, Masaru Kido, and Hiroyasu Tanaka, will accept this prestigious award for its pioneering work in developing and commercializing 3D flash memory. This breakthrough technology has become fundamental to a wide range of computing applications – including advanced smartphones, PCs, SSDs, data centers, AI, and industrial.
Kioxia presented the concept of BiCS FLASHTM 3D flash memory technology at the VLSI Symposium in 2007. After announcing the prototype, Kioxia continued development to optimize the technology for mass production, eventually introducing the world’s first 256 gigabit (Gb), 48-layer 3D flash memory in 2015.
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