Toshiba Starts Test-Sample Shipments of a Bare Die 1200V SiC MOSFET with Low On-Resistance and High Reliability, for Use in Automotive Traction Inverters

KAWASAKI, Japan, Nov 12 (Bernama) -- Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die¹ 1200V silicon carbide (SiC) MOSFET for automotive traction inverters² with an innovative structure that deliver both low On-resistance and high reliability. Test samples are now shipping, for evaluation by customers.

The reliability of typical SiC MOSFETs is degraded by increased On-resistance when its body diodes are bipolar energized³ during reverse conduction operation⁴ . Toshiba SiC MOSFETs alleviate this issue by a device structure that embeds Schottky barrier diodes (SBDs) into the MOSFET to inactivate body diodes, but positioning the SBDs on the chip reduces the area available for channels that determines the resistance of MOSFET On-operation and increases the chip’s On-resistance.