Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers

KAWASAKI, Japan, May 21 (Bernama) -- Toshiba Electronic Devices & Storage Corporation ("Toshiba") today started shipping test samples of “TW007D120E,” a 1200V trench-gate SiC MOSFET primarily intended for power supply systems in next-generation AI data centers that is also suitable for use in renewable energy-related equipment.

With the rapid expansion of generative AI, increasing power consumption has become a pressing issue for data centers. In particular, the widespread adoption of high-power AI servers and the growing deployment of 800V high-voltage direct current (HVDC) architectures are driving demand for power supply systems with higher power conversion efficiency and power density. Toshiba has addressed these requirements for next-generation AI data centers by developing TW007D120E, which will contribute to lower power consumption and to the miniaturization and higher efficiency of power supply systems.